General Purpose and Low VCE(sat) Transistors | MJE350

0.5 A, 300 V PNP Bipolar Power Transistor

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The PNP Bipolar Power Transistor is designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.

  • High Collector-Emitter Sustaining Voltage - VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc
  • Excellent DC Current Gain - hFE = 30-240 @ IC = 50 mAdc
  • Pb-Free Package is Available

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MSL Type

MSL Temp (°C)

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ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MJE350G

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CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

Y

PNP

General Purpose

-

0.5

300

-

3

-

-

30

240

-

20

$0.3293

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可靠性数据

Die Related Summary Data

Device: MJE350G

Equivalent to wafer fab process: BPT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

3017145632

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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