Darlington Transistors | 2N6035

4.0 A，60 V，PNP 达林顿双极功率晶体管

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概览

该 4 A 80 V NPN 达林顿双极功率晶体管适用于通用放大器和低速开关应用。

  • High DC Current Gain -
    hFE = 2000 (Typ) @ IC = 2.0 Adc
  • Collector-Emitter Sustaining Voltage - @ 100 mAdc
    VCEO(sus) = 60 Vdc (Min) - 2N6035, 2N6038
    VCEO(sus) = 80 Vdc (Min) - 2N6036, 2N6039
  • Forward Biased Second Breakdown Current Capability
    IS/b = 1.5 Adc @ 25 Vdc
  • Monolithic Construction with Built-in Base-Emitter
    Resistors to Limit Leakage Multiplication
  • Space-Saving High Performance-to-Cost Ratio
    TO-225AA Plastic Package
  • Pb-Free Packages are Available

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2N6035G

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CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

PNP

4

60

2

0.75

15

25

Price N/A

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