Darlington Transistors | BDW42

15 A, 100 V NPN Darlington Bipolar Power Transistor

Obsolete

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This series of plastic, medium-power NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. The BDW42, BDW46 and BDW47 are complementary devices.

  • High DC Current Gain - hFE = 2500 (typ.) @ IC = 5.0 Adc.
  • Collector Emitter Sustaining Voltage @ 30 mAdc:
    VCEO(sus) = 80 Vdc (min.) BDW46
    VCEO(sus) = 100 Vdc (min.) - BDW42/BDW47
  • Low Collector Emitter Saturation Voltage
    VCE(sat) = 2.0 Vdc (max.) @ IC = 5.0 Adc
    VCE(sat) = 3.0 Vdc (max.) @ IC = 10.0 Adc
  • Monolithic Construction with Built-In Base Emitter Shunt resistors
  • TO-220AB Compact Package
  • Pb-Free Packages are Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

Reference Price

BDW42

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

NPN

15

100

2

1

-

4

Price N/A

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BDW42G

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Obsolete

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CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

NPN

15

100

2

1

-

4

Price N/A

More Details

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可靠性数据

Die Related Summary Data

Device: BDW42G

Equivalent to wafer fab process: BPT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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