Digital Transistors (BRTs) | DTA113EM3

PNP 双极数字晶体管 (BRT)

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概览

此系列数字晶体管适用于替换单器件及其外部电阻偏置网络。该偏置电阻晶体管 (BRT) 包含一个晶体管，搭载一个由两个电阻组成的单片偏置网络；一个串联基极电阻和一个基极-射极电阻。该 BRT 将这些组件集成到了一个器件中，因此不再需要这些外部组件。使用 BRT 可以同时降低系统成本和板空间。

  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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DTA113EM3T5G

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CAD Model

Pb

A

H

P

SOT-723-3

631AA

1

260

REEL

8000

N

PNP

0.1

50

3

1

1

1

0.5

2

$0.0325

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NSVDTA113EM3T5G

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CAD Model

Pb

A

H

P

SOT-723-3

631AA

1

260

REEL

8000

N

PNP

0.1

50

3

1

1

1

0.5

2

$0.0293

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可靠性数据

Die Related Summary Data

Device: DTA113EM3T5G

Equivalent to wafer fab process: SST

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

0

4654891639

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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