General Purpose and Low VCE(sat) Transistors | 2N6491

双极功率晶体管，NPN，80 V，15 A

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该 15A，80 V，PNP 双极功率晶体管适用于通用放大器和开关应用。 2N6487、2N6488 (NPN)；以及 2N6490、2N6491 (PNP) 为互补器件。

  • Designed for use in general-purpose amplifier and switching applications.

  • DC Current Gain Specified to 15 Amperes-- hFE = 20-150 @ IC = 5.0 Adc; hFE= 5.0 (Min) @ IC = 15 Adc
  • Collector-Emitter Sustaining Voltage--VCEO(sus) = 60 Vdc (Min) - 2N6487, 2N6490; VCEO(sus)= 80 Vdc (Min) - 2N6488, 2N6491
  • High Current Gain--Bandwidth Product
    fT = 5.0 MHz (Min) @ IC = 1.0 Adc
  • TO-220AB Compact Package
  • Pb-Free Packages are Available

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Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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fT Min (MHz)

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2N6491

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CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

PNP

General Purpose

1.3

15

80

-

-

-

-

20

150

5

75

Price N/A

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2N6491G

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CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

PNP

General Purpose

1.3

15

80

90

5

-

1.3

20

150

5

75

$0.396

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可靠性数据

Die Related Summary Data

Device: 2N6491G

Equivalent to wafer fab process: BPT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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