General Purpose and Low VCE(sat) Transistors | NSS12500UW3

Low VCE(sat) Transistor, PNP, 12 V, 5.0 A

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Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

  • High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)

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MSL Temp (°C)

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Polarity

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VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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Reference Price

NSS12500UW3T2G

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CAD Model

Pb

A

H

P

WDFN-3

506AU

1

260

REEL

3000

N

PNP

Low VCE(sat)

0.26

5

12

12

7

0.9

0.9

250

-

100

1.5

$0.3237

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可靠性数据

Die Related Summary Data

Device: NSS12500UW3T2G

Equivalent to wafer fab process: SST

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

0

4654891639

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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