General Purpose and Low VCE(sat) Transistors | NSS20500UW3

低饱和压晶体管，PNP，-20 V，7.0 A

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概览

低饱和压双极晶体管是具有超低饱和压和高电流增益能力的微型表面贴装器件。这些器件设计用于需要经济、高效的能量控制的低电压、高速开关应用。

  • High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

NSS20500UW3T2G

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CAD Model

Pb

A

H

P

WDFN-3

506AU

1

260

REEL

3000

Y

PNP

Low VCE(sat)

0.26

5

20

20

7

0.9

0.9

250

-

100

1.5

$0.1699

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NSS20500UW3TBG

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Active

CAD Model

Pb

A

H

P

WDFN-3

506AU

1

260

REEL

3000

Y

PNP

Low VCE(sat)

0.26

5

20

20

7

0.9

0.9

250

-

100

1.5

$0.1699

More Details

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可靠性数据

Die Related Summary Data

Device: NSS20500UW3T2G

Equivalent to wafer fab process: SST

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产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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