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AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop VII Trench construction. Provides good performance in demanding switching applications, offering both low on state voltage and low switching loss offers good performance for both hard and soft switching topology in automotive application.
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V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
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Reference Price
AFGH4L40T120RWD-STD
Active
Pb
A
H
P
TO-247-4
NA
0
TUBE
450
F
FS7
1200
40
1.67
1.99
~NA~
~NA~
~NA~
~NA~
112
6
~NA~
416
Yes
$4.7695
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