AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop VII Trench construction. Provides good performance in demanding switching applications, offering both low on state voltage and low switching loss offers good performance for both hard and soft switching topology in automotive application.
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AFGH4L40T120RWD-STD
Active, New
Pb
A
H
P
TO-247-4
NA
0
TUBE
450
F
FS7
1200
40
1.67
1.99
~NA~
~NA~
~NA~
~NA~
112
6
~NA~
416
Yes
Price N/A
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