IGBTs | AFGH4L60T120RWD-STD

IGBT - Automotive Grade 1200 V 60 A, TO-247 4L

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AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop VII Trench construction. Provides good performance in demanding switching applications, offering both low on state voltage and low switching loss offers good performance for both hard and soft switching topology in automotive application.

  • HEV-EV PTC heater
  • HEV-EV e-compressor
  • HEV-EV on board charger

  • Electric vehicles
  • Hybrid electric vehicles

  • AEC Q101 qualified
  • Tight Parameter distribution
  • Low Vcesat
  • Low Eoff & Eon

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AFGH4L60T120RWD-STD

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CAD Model

Pb

A

H

P

TO-247-4

340CJ

NA

0

TUBE

450

F

FS7

1200

60

1.68

1.98

~NA~

~NA~

~NA~

~NA~

~NA~

6

~NA~

287

Yes

$5.3572

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