方案
按技术分类
设计
AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop VII Trench construction. Provides good performance in demanding switching applications, offering both low on state voltage and low switching loss offers good performance for both hard and soft switching topology in automotive application.
搜寻
Close Search
产品:
1
分享
排序方式
产品系列:
┗
可订购器件:
1
产品
状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Family
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Reference Price
AFGH4L60T120RWD-STD
Active, New
Pb
A
H
P
TO-247-4
NA
0
TUBE
450
F
FS7
1200
60
1.68
1.98
~NA~
~NA~
~NA~
~NA~
~NA~
6
~NA~
287
Yes
$5.3572
More Details
Show More
1-25 of 25
Products per page
Jump to :
如果你希望对这款安森美产品作进一步了解,欢迎点击下方提交表格联系我们的销售团队。
向销售发送邮件
分享
导出
Rows
Printer Friendly Version
PDF Format
Excel Format
CSV Format
To proceed order you need to accept Terms
Hello, your current browser settings are preventing us from processing your submission. You can adjust your browser settings and reload the page or you can submit an email directly to inside.sales@onsemi.com
You might also try the following:
Thank you for submitting the contact sales form. Your request is on its way to our sales support team!
We thank you for your interest in onsemi and are working on your request. Our sales support team will respond to your request within two business days.