AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop VII Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss offers optimum performance for both hard and soft switching topology in automotive application.
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AFGHL25T120RW
Active
Pb
A
H
P
TO-247-3LD
NA
0
TUBE
450
F
FS7
1200
25
1.38
~NA~
~NA~
~NA~
~NA~
~NA~
113
6
~NA~
405
No
$3.5839
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