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AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop VII Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss offers optimum performance for both hard and soft switching topology in automotive application.
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CAD Models
Compliance
Package Type
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MSL Type
MSL Temp (°C)
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ON Target
Family
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Reference Price
AFGHL40T120RWD
Active
Pb
A
H
P
TO-247-3LD
NA
0
TUBE
450
F
FS7
1200
40
1.42
1.51
~NA~
~NA~
147
33.5
170
6
~NA~
576
Yes
$5.4944
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