IGBTs | AFGHL75T65SQDC

IGBT with SiC copack diode

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Using the novel field stop 4th generation IGBT technology and the1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDCoffers the optimum performance with both low conduction andswitching losses for high efficiency operations in various applications,especially totem pole bridgeless PFC and Inverter

  • Totem pole bridgeless PFC
  • On Board chargers
  • HV DC-DC converters

  • Hybrid Electric Vehicles
  • Battery electric vehicles

  • SiC schottky co-pack diode
  • Fast switching IGBT
  • AEC-Q101 qualified
  • Tight parameter distribution and Positive temperature co-efficient

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

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Irr Typ (A)

Gate Charge Typ (nC)

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EAS Typ (mJ)

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Co-Packaged Diode

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AFGHL75T65SQDC

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CAD Model

Pb

A

H

P

-

340CX

NA

0

TUBE

450

Y

-

650

75

1.6

1.45

0.24

0.48

~NA~

~NA~

139

~NA~

~NA~

375

Yes

$5.7937

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可靠性数据

Die Related Summary Data

Device: AFGHL75T65SQDC

Equivalent to wafer fab process: TRENCH IGBT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TRENCH IGBT

0

8782900981

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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