IGBTs | AFGY120T65SPD-B4

IGBT – 带VCESAT和VTH分档的650V、120A 场截止型沟槽式IGBT

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概览

AFGY120T65SPD-B4是一款基于沟槽式场截止 型第3代技术的650V 120A IGBT。这款产品基于Vcesat 和 Vth 进行分档，即每个单独单元的顶部标记定义了该器件的Vcesat和Vth范围，让客户能够并行组装参数分布非常接近的单元，从而在应用中实现更好的电流共享。

  • 电动汽车主驱电机逆变器

  • 电动车
  • 混动电车

  • Vcesat 和 Vth 分档
  • 车规级认证
  • 极低饱和电压：VCE(sat) = 1.5 V（典型值）@ IC = 120 A
  • 最高结温：TJ = 175°C
  • 正温度系数
  • 紧凑的参数分布
  • 高输入阻抗
  • 零件100%经过动态测试
  • 短路耐受性 > 6μs @ 25 oC
  • 与软性、快速恢复Extremefast二极管共封装
  • 无铅、无卤素/BFR，并且符合 RoHS 标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

AFGY120T65SPD-B4

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CAD Model

Pb

A

H

P

TO-247-3

340CU

NA

0

TUBE

30

N

-

650

240

1.5

1.3

3.5

6.8

123

-

162

6

-

882

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: AFGY120T65SPD-B4

Equivalent to wafer fab process: IGBT

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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