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AFGY160T65SPD-B4 is a 650 V 160 A IGBT based on trench field stop 3 technology. This product is binned based on Vcesat and Vth i.e. the top side marking on each individual unit defines the range of Vcesat and Vth the particular device has. This allows customers to assemble units in parallel that have very close parameter distribution. This enables better current sharing in application.
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V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
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Irr Typ (A)
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Co-Packaged Diode
Reference Price
AFGY160T65SPD-B4
Active
Pb
A
H
P
TO-247-3
NA
0
TUBE
30
Y
-
650
240
1.6
1.4
5.7
12.4
132
~NA~
163
6
~NA~
882
Yes
$7.7908
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