IGBT - 650V, 160A Field Stop Trench IGBT with VCESAT and VTH Binning

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AFGY160T65SPD-B4 is a 650 V 160 A IGBT based on trench field stop 3 technology. This product is binned based on Vcesat and Vth i.e. the top side marking on each individual unit defines the range of Vcesat and Vth the particular device has. This allows customers to assemble units in parallel that have very close parameter distribution. This enables better current sharing in application.

  • EV traction inverter

  • Electrical Vehicles

  • AEC-Q101 Qualified and PPAP Capable
  • Vcesat and Vth binning
  • Positive Temperature Co-Efficient
  • 100% of the Parts are Dynamically Tested
  • Short circuit ruggedness > 6us @ 25°C
  • This Device is Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
  • Copacked with Soft, Fast Recovery Extremefast Diode

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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AFGY160T65SPD-B4

Active

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

30

Y

-

650

240

1.6

1.4

5.7

12.4

132

~NA~

163

6

~NA~

882

Yes

$7.7908

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