IGBTs | FGA15N120ANTDTU

IGBT，1200V，15A，NPT 沟槽

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该 1200V NPT IGBT 采用安森美半导体的专属沟槽设计和先进 NPT 技术，提供卓越导通和开关性能、高雪崩耐用性和轻松并联操作。该器件非常适合谐振或软开关应用，比如电感加热、微波炉

  • 消费型设备
  • NPT 沟道技术，正温度系数
  • 低饱和电压：VCE(sat)（典型值） = 1.9V@ IC = 15A 且 TC = 25°C
  • 低开关损耗：EOFF（典型值） = 0.6mJ（IC = 15A 且 TC = 25°C时）
  • 极度增强雪崩能力

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

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Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

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Reference Price

FGA15N120ANTDTU-F109

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CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

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0

TUBE

450

N

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1200

-

-

1.7

0.6

3

-

27

120

-

-

186

-

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