IGBTs | FGA20S125P

IGBT，1250V，20A，短路阳极

Obsolete

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概览

安森美半导体的短路阳极沟槽 IGBT 采用先进的场截止沟槽和短路阳极技术，可为软开关应用提供卓越的导通和开关性能。该器件可在并联配置中运行，且具有卓越的雪崩功能。该器件适用于感应加热和微波炉。

  • 消费型设备

  • 高速开关
  • 低饱和电压：VCE(sat) =2.0V @ IC = 20A
  • 高输入阻抗
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGA20S125P-SN00336

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CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

1250

-

-

1.75

0.5

0.74

-

-

153

-

-

250

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGA20S125P-SN00336

Equivalent to wafer fab process: IGBT

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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