IGBTs | FGA25N120ANTDTU

IGBT，1200V，25A，NPT 沟槽

Lifetime

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概览

该 1200V NPT IGBT 采用安森美半导体的专属沟槽设计和先进 NPT 技术，提供卓越导通和开关性能、高雪崩耐用性和轻松并联操作。该器件非常适合谐振或软开关应用，比如电感加热、微波炉

  • 消费型设备

  • NPT 沟道技术，正温度系数
  • 低饱和电压：VCE(sat),典型值 = 2.0V@ IC = 25A 和 TC = 25°C
  • 低开关损耗：E关断, 典型值 = 2.0V@ IC = 25A 和 TC = 25°C
  • 极度增强雪崩能力

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Product services, tools and other useful resources related to FGA25N120ANTDTU

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状态

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGA25N120ANTDTU-F109

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Lifetime

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CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

1200

-

-

2

0.96

4.1

-

27

200

-

-

312

-

$1.931

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可靠性数据

Die Related Summary Data

Device: FGA25N120ANTDTU-F109

Equivalent to wafer fab process: 3B,IK

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IK

0

831217026

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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