IGBT,1200V,25A,NPT 沟槽

Lifetime

概览

该 1200V NPT IGBT 采用安森美半导体的专属沟槽设计和先进 NPT 技术,提供卓越导通和开关性能、高雪崩耐用性和轻松并联操作。该器件非常适合谐振或软开关应用,比如电感加热、微波炉

  • 消费型设备

  • NPT 沟道技术,正温度系数
  • 低饱和电压:VCE(sat),典型值 = 2.0V@ IC = 25A 和 TC = 25°C
  • 低开关损耗:E关断, 典型值 = 2.0V@ IC = 25A 和 TC = 25°C
  • 极度增强雪崩能力

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGA25N120ANTDTU-F109

CAD Model

Pb

A

H

P

TO-3P-3L

NA

0

TUBE

450

N

-

1200

-

-

2

0.96

4.1

-

27

200

-

-

312

-

$1.931

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