IGBTs | FGA25N120ANTDTU

IGBT，1200V，25A，NPT 沟槽

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该 1200V NPT IGBT 采用安森美半导体的专属沟槽设计和先进 NPT 技术，提供卓越导通和开关性能、高雪崩耐用性和轻松并联操作。该器件非常适合谐振或软开关应用，比如电感加热、微波炉

  • 消费型设备
  • NPT 沟道技术，正温度系数
  • 低饱和电压：VCE(sat),典型值 = 2.0V@ IC = 25A 和 TC = 25°C
  • 低开关损耗：E关断, 典型值 = 2.0V@ IC = 25A 和 TC = 25°C
  • 极度增强雪崩能力

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

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Reference Price

FGA25N120ANTDTU-F109

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Active

CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

1200

-

-

2

0.96

4.1

-

27

200

-

-

312

-

$1.931

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