IGBTs | FGA6530WDF

650 V、30 A 场截止沟道 IGBT

Obsolete

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概览

Fairchild 的场截止第 3代 IGBT 新系列采用创新型场截止 IGBT 技术，为低导通和开关损耗的焊接应用提供最优性能。

  • 最大结温： TJ = 175°C
  • 正温度系数，易于并联运行
  • 高电流能力
  • 低饱和电压： VCE(sat) = 1.8 V（典型值） @ IC = 30 A
  • ILM(1) 部件 100% 检测
  • 高输入阻抗
  • 快速开关
  • 紧密的参数分布
  • 符合 RoHS 标准

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

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FGA6530WDF

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Obsolete

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CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

650

30

1.8

1.7

0.162

0.96

81

-

37.4

-

-

176

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGA6530WDF

Equivalent to wafer fab process: 3B,IJ

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IJ

0

1915930880

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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