IGBTs | FGB40N60SM

IGBT，600V，40A，场截止

Obsolete

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概览

安森美半导体的新型场截止第 2 代 IGBT 系列采用新型场截止 IGBT 技术，为低导通和开关损耗至关重要的焊接机和 PFC 应用提供最佳性能。

  • 其他工业

  • 最大结温TJ =175 °C
  • 正温度系数，易于并联运行
  • 高电流能力
  • 低饱和电压：VCE(sat) =1.9V（典型值）@ IC =40A
  • 快速开关：EOFF =6.5uJ/A
  • 紧密的参数分布
  • 符合 RoHS 标准
  • 仅红外回流焊

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Product services, tools and other useful resources related to FGB40N60SM

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MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

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Irr Typ (A)

Gate Charge Typ (nC)

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Co-Packaged Diode

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FGB40N60SM

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Obsolete

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CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

260

REEL

800

N

-

600

40

1.9

-

0.26

0.87

-

-

119

-

-

349

No

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGB40N60SM

Equivalent to wafer fab process: IGBT

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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