IGBTs | FGD3N60LSD

IGBT，600V，3A，1.2V，DPAK，平面

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概览

安森美半导体的绝缘门极双极晶体管 (IGBT) 提供极低导通损耗。该器件适用于需要极低导通电压降的应用。

  • 高电流能力
  • 极低饱和电压： VCE(sat) = 1.2 V（IC = 3 A时）
  • 高输入阻抗

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGD3N60LSDTM

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

-

600

6

1.2

1.5

1

0.25

234

2.64

12.5

-

-

40

Yes

$0.4457

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FGD3N60LSDTM-T

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Obsolete

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CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

-

600

6

-

1.5

1.9

0.3

234

2.64

12.5

-

-

40

-

Price N/A

More Details

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可靠性数据

Die Related Summary Data

Device: FGD3N60LSDTM

Equivalent to wafer fab process: 3B,IL

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IL

1

1920107056

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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