IGBTs | FGH40N60SMD

600 V、40 A、1.9 V、TO-247
场截止 IGBT

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概览

飞兆半导体的场截止第二代 IGBT 新系列采用新型场截止 IGBT 技术，为光伏逆变器、UPS、焊机、通讯、ESS 和 PFC 等低导通和开关损耗至关重要的应用提供最佳性能。

  • 发电和配电
  • 不间断电源
  • 其他工业

  • 最大结温 TJ=175°C
  • 正温度系数，易于并联运行
  • 高电流能力
  • 低饱和电压： VCE(sat) =1.9V（典型值） IC = 40A 时
  • 高输入阻抗
  • 快速开关： EOFF =6.5uJ/A
  • 紧密的参数分布
  • 符合 RoHS 标准

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

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FGH40N60SMD

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Active

CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

Y

-

600

40

1.9

-

-

-

36

-

-

-

-

-

Yes

$1.9865

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可靠性数据

Die Related Summary Data

Device: FGH40N60SMD

Equivalent to wafer fab process: 3B,IL

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产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IL

1

1920107056

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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