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Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop VII Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss offers optimum performance for both hard and soft switching topology in industrial application.
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V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
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Irr Typ (A)
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Reference Price
FGH4L40T120SWD
Active, New
Pb
A
H
P
TO-247-4
NA
0
TUBE
450
F
FS7
1200
40
1.7
1.94
1.14
1.38
192
26
148
~NA~
~NA~
384
Yes
Price N/A
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