IGBTs | FGH4L75T65MQDC50

650V Field stop 4th generation mid speed IGBT with co-pack SiC diode 

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Using the novel field stop 4th generation IGBT and 1.5 generation SiC Schottky Diode technology in TO-247 4-lead package, FGH4L75T65MQDC50 offers the optimum performance with low conduction and switching losses for high-efficiency operations for industrial applications

  • Solar Inverter
  • UPS
  • Energy Storage System
  • PFC
  • EV Charging Stations

  • Solar Inverter
  • UPS
  • Energy Storage System
  • EV Charging Stations

  • Positive temperature co-efficient
  • Low Vce(sat)
  • Low Eon and Eoff

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

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Eon Typ (mJ)

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Irr Typ (A)

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Co-Packaged Diode

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FGH4L75T65MQDC50

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CAD Model

Pb

A

H

P

TO-247-4

340CJ

NA

0

TUBE

450

F

-

650

75

1.45

1.46

0.96

0.72

~NA~

~NA~

145

~NA~

~NA~

385

Yes

$5.8052

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