IGBTs | FGH60N60SM_F085

IGBT，600V，60A，1.8V，TO-247 场截止

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概览

安森美半导体的新型场截止沟槽 IGBT 系列采用新型场截止 IGBT 工艺，为汽车充电器、太阳能逆变器、UPS 和数字发电机等低导通和开关损耗至关重要的其他应用提供最佳性能。

  • 最大结温： TJ=175℃
  • 正温度系数，易于并联运行
  • 高电流能力
  • 低饱和电压： VCE(sat) = 1.8 V（典型值）(IC = 60 A)
  • 高输入阻抗
  • 紧密的参数分布
  • 符合 RoHS 标准
  • 符合 AEC-Q101 汽车行业标准要求

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGH60N60SMD-F085

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Obsolete

CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

600

120

-

2.1

0.39

1.59

33

-

187

-

-

600

-

Price N/A

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