IGBTs | FGH60N60SM_F085

IGBT，600V，60A，1.8V，TO-247 场截止

Obsolete

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概览

安森美半导体的新型场截止沟槽 IGBT 系列采用新型场截止 IGBT 工艺，为汽车充电器、太阳能逆变器、UPS 和数字发电机等低导通和开关损耗至关重要的其他应用提供最佳性能。

  • 最大结温： TJ=175℃
  • 正温度系数，易于并联运行
  • 高电流能力
  • 低饱和电压： VCE(sat) = 1.8 V（典型值）(IC = 60 A)
  • 高输入阻抗
  • 紧密的参数分布
  • 符合 RoHS 标准
  • 符合 AEC-Q101 汽车行业标准要求

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGH60N60SMD-F085

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CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

600

120

-

2.1

0.39

1.59

33

-

187

-

-

600

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGH60N60SMD-F085

Equivalent to wafer fab process: 3B,IM

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IM

0

975477967

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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