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公司介绍
安森美半导体的场截止 IGBT 采用新型场截止 IGBT 技术,为太阳能逆变器、UPS、焊接机和 PFC 等低导通和开关损耗至关重要的应用提供最佳性能。
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CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Family
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Reference Price
FGH75N60UFTU
Obsolete
Pb
A
H
P
TO-247-3
NA
0
TUBE
450
N
-
600
75
1.9
-
1.35
3.05
-
-
250
-
-
452
No
Price N/A
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可靠性数据
Die Related Summary Data
Device: FGH75N60UFTU
Equivalent to wafer fab process: IGBT
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
IGBT
1
2930462991
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)
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