IGBTs | FGH75T65SHDTLN4

IGBT, 650 V, 75 A Field Stop Trench

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Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

  • High performance Power converstion - inverter
  • High performance power conversion - PFC

  • UPS
  • Solar inverter

  • Maximum Junction Temperature: TJ =175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 75 A
  • 100% of the Parts Tested for ILM(1)
  • High Input Impedance
  • Fast Switching
  • Tighten Parameter Distribution
  • RoHS Compliant

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Die Related Summary Data

Device: FGH75T65SHDTLN4

Equivalent to wafer fab process: 3B,IJ

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IJ

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1915930880

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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