IGBTs | FGH80N60FD

IGBT，600V，场截止

Obsolete

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概览

安森美半导体的场截止 IGBT 采用新型场截止 IGBT 技术，为电感加热、电信、ESS 和 PFC 等低导通和开关损耗至关重要的应用提供优异性能。

  • 消费型设备

  • 高电流能力
  • 低饱和电压：VCE(sat) =1.8V @ IC = 40A
  • 高输入阻抗
  • 快速开关
  • 符合 RoHS 标准

Product Resources

Product services, tools and other useful resources related to FGH80N60FD

CAD Model

CAD模型

物质成分

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可靠性数据

产品列表

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产品:

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产品系列:

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可订购器件:

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产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGH80N60FDTU

Contact Sales

Obsolete

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CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

600

40

1.8

2.3

0.52

1

105

2.6

120

-

-

290

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGH80N60FDTU

Equivalent to wafer fab process: 3B,IO

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IO

0

819278237

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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