IGBTs | FGL35N120FTD

1200V，35A，场截止沟道 IGBT

Obsolete

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概览

飞兆半导体的 1200V 沟道 IGBT 系列采用先进的场截止沟道 IGBT 技术，为光伏逆变器、UPS 和焊机等硬开关应用提供最佳性能。

  • 发电和配电
  • 不间断电源

  • 场截止沟道技术
  • 高速开关
  • 低饱和电压：VCE(sat) = 1.68 V @ IC = 35A
  • 高输入阻抗

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Package Type

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MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

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Irr Typ (A)

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FGL35N120FTDTU

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Obsolete

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CAD Model

Pb

A

H

P

TO-264-3

340CA

NA

0

TUBE

375

N

-

1200

35

1.68

2.7

1.7

2.5

520

7.6

210

-

-

368

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGL35N120FTDTU

Equivalent to wafer fab process: 3B,IL

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IL

1

1920107056

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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