IGBTs | FGY60T120SQDN

IGBT，超场截止 -1200V 60A

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概览

此绝缘门极双极晶体管 (IGBT) 采用坚固耐用、经济高效的超场截止 (FS) 沟槽结构，为要求苛刻的开关应用提供出色性能，提供低导通状态电压，并最大限度降低开关损耗。此款 IGBT 非常适合 UPS 和太阳能应用。该器件结合了一个软性和快速的组合封装续流二极管，带有低正向电压。

  • Solar Inverter
  • EV charging station

  • Industrial

  • Extremely Efficient Trench with Ultra Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • These are Pb−Free Devices

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Package Type

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MSL Type

MSL Temp (°C)

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Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

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Irr Typ (A)

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Co-Packaged Diode

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FGY60T120SQDN

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CAD Model

Pb

A

H

P

TO-247-3

340CD

NA

0

TUBE

450

Y

FS7

1200

60

1.7

-

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-

-

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-

-

$6.2341

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可靠性数据

Die Related Summary Data

Device: FGY60T120SQDN

Equivalent to wafer fab process: IGN IGBT

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGN IGBT

12

24556821265

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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