IGBTs | NGTB40N120FL3

IGBT，超场截止 -1200V 40A

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概览

这款绝缘门双极晶体管（IGBT）采用耐用且高性价比的超场截止型沟槽结构，能在要求严苛的开关应用中表现卓越性能，并且提供低导通状态电压和最低的开关损耗。这款IGBT非常适用于UPS和光伏应用。这款器件结合了一个软性和快速的共封装续流二极管，带较低的正向电压。

  • 光伏逆变器
  • 不间断电源逆变器
  • 焊接

  • 工业

  • 超场截止型沟槽结构提供极为高效的沟槽结构
  • 最高结温 TJ =175℃
  • 软性快速反向恢复二极管
  • 优化用于高速开关
  • 无铅器件

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V(BR)CES Typ (V)

IC Max (A)

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NGTB40N120FL3WG

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Pb

A

H

P

TO-247

NA

0

TUBE

30

Y

-

1200

40

1.7

3

1.1

1.6

86

12

212

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-

454

Yes

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可靠性数据

Die Related Summary Data

Device: NGTB40N120FL3WG

Equivalent to wafer fab process: IGN IGBT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGN IGBT

12

24556821265

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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