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公司介绍
这款绝缘门双极晶体管(IGBT)采用耐用且高性价比的超场截止型沟槽结构,能在要求严苛的开关应用中表现卓越性能,并且提供低导通状态电压和最低的开关损耗。这款IGBT非常适用于UPS和光伏应用。这款器件结合了一个软性和快速的共封装续流二极管,带较低的正向电压。
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CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Family
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Reference Price
NGTB40N120FL3WG
Active
Pb
A
H
P
TO-247
NA
0
TUBE
30
Y
-
1200
40
1.7
3
1.1
1.6
86
12
212
-
-
454
Yes
Price N/A
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可靠性数据
Die Related Summary Data
Device: NGTB40N120FL3WG
Equivalent to wafer fab process: IGN IGBT
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
IGN IGBT
12
24556821265
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)