N-Channel Shielded Gate PowerTrench® MOSFET 40 V, 150 A, 2.1 mΩ

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This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance.

  • This product is general usage and suitable for many different applications.

  • DC-DC Power Supplies
  • MV Synchronous Buck Converters

  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 2.1 mΩ at VGS = 10 V, ID =23 A
  • Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 18A
  • Lowers Switching Noise/EMI
  • MSL1 Robust Package Design
  • 100% UIL Tested
  • RoHS Compliant

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTTFS2D1N04HLTWG

Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Single

0

40

2.1

20

2

150

2.2

-

3.3

20.7

43.6

2745

6.2

17

645

38

$0.701

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