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SuperFET® II MOSFET 是全新的高压超结 (SJ) MOSFET 系列,利用电荷平衡技术实现出色的低导通电阻,以及更低门极电荷方面的卓越性能。此先进技术专用于最大程度降低导电损耗,提供卓越的开关性能和更高的雪崩能量,并且可以承受极端 dv/dt 速率。因此,SuperFET II MOSFET 适用于各种 AC/DC 电源转换,实现系统小型化和更高能效。
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CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
FCH170N60
Active
Pb
A
H
P
TO-247-3
NA
0
TUBE
450
Y
N-Channel
PowerTrench® T1
TO-247
High Voltage
Standard
0
Single
0
600
170
DC: ±20, AC: ±30
3.5
22
227
-
-
-
42
2150
11
6200
60
2.65
$2.5422
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