High Voltage MOSFETs | FCMT099N65S3

功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，30 A，99 mΩ，Power88

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概览

SUPERFET III MOSFET 是安森美半导体的全新高压超结 (SJ) MOSFET 系列，利用电荷平衡技术实现出色的低导通电阻，以及更低门极电荷方面的卓越性能。此技术专用于最大程度降低导电损耗，提供卓越的开关性能、dv/dt 速率和更高的雪崩能量。因此，SUPERFET III MOSFET 非常适用于开关电源应用，如服务器/电信电源、适配器和太阳能反相器应用。Power88 封装是一款超薄表面贴装封装（高 1mm），体积和占地面积都很小 (8 * 8 mm2)。Power88 封装内的 SUPERFET III MOSFET 具有更低的寄生电源电感以及分离的电源和驱动源，可提供卓越的开关性能。Power88 提供 1 级湿度敏感性 (MSL 1)。

  • Telecommunication
  • Cloud system
  • Industrial
  • Telecom power
  • Server power
  • LED Lighting
  • Adapter
  • 700V @ TJ = 150C
  • Leadless Ultra-thin SMD package
  • Kelvin contact
  • Ulta Low Gate Charge (Typ. Qg = 56 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 500 pF)
  • Optimized Capacitance
  • Typ. RDS(on) = 87mohm
  • 100% Avalanche Tested
  • RoHS Compliant
  • Moisture Sensitivity Level 1 guarantee
  • Internal Gate Resistance: 0.5 Ω

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCMT099N65S3

Contact Sales

Active

CAD Model

Pb

A

H

P

PQFN-4

483AP

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 88

High Voltage

Standard

0

Single

0

650

99

30

4.5

30

227

-

-

-

56

2270

23

6500

50

-

$2.8786

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