Low/Medium Voltage MOSFETs | FDB024N04AL7

N 沟道 PowerTrench® MOSFET 40V, 219A, 2.4mΩ

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概览

此 N 沟道 MOSFET 采用飞兆半导体先进的 Power Trench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。

  • AC-DC商用电源-服务器和工作站
  • AC-DC商用电源-台式计算机
  • 其他数据处理
  • RDS(on) = 2.0mΩ （典型值）@ VGS = 10V, ID = 80A
  • 快速开关速度
  • 低栅极电荷，QG = 84nC（典型值）
  • 高性能沟道技术可实现极低的 RDS(on)
  • 高功率和高电流处理能力
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDB024N04AL7

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Last Shipments

CAD Model

Pb

A

H

P

D2PAK-7 / TO-263-7

418AY

1

245

REEL

800

N

N-Channel

PowerTrench® T1

D2PAK7

Low-Medium Voltage

Standard

0

Single

0

40

2.4

±20

3

219

214

-

-

-

84

5490

12

49

1220

155

Price N/A

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