Low/Medium Voltage MOSFETs | FDB0250N807L

80 V N-沟道 PowerTrench® MOSFET

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CAD Model

CAD模型

概览

此 N-沟道 MOSFET 采用飞兆先进的 PowerTrench® 工艺生产，这一先进工艺是专为最小化工业应用的导通电阻并保持卓越的耐用性和开关性能而定制的。

  • Industrial Motor Drive
  • Industrial Power Supplies
  • Industrial Automation
  • Battery Protection
  • Uninterruptible Power Supplies
  • Energy Inverters
  • Energy Storage
  • Load Switch
  • Battery Opperated Tools
  • Solar Inverters
  • 最大值 rDS(on) = 2.2 mΩ（VGS = 10 V、ID = 30 A
    ）
  • 最大值 rDS(on) = 2.7 mΩ（VGS = 8 V、ID = 27 A
    ）
  • 快速开关速度
  • 低栅极电荷
  • 高性能沟槽技术可实现极低的 RDS(on)
  • 高功率和高电流处理能力
  • 符合RoHS标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDB0250N807L

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Active

CAD Model

Pb

A

H

P

D2PAK-7 / TO-263-7

418AY

1

245

REEL

800

Y

N-Channel

PowerTrench® T6

D2PAK7

Low-Medium Voltage

Standard

0

Single

0

80

2.2

±20

4

240

214

-

-

-

143

11000

25

81

1435

115

$2.3243

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