Low/Medium Voltage MOSFETs | FDB0260N1007L

N 沟道 PowerTrench® MOSFET 100V，200A，2.6mΩ

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CAD Model

CAD模型

概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，特别适用于为工业应用最大程度降低导通电阻，同时保持出色的坚固性和开关性能。

  • Industrial Motor Drive
  • Industrial Power Supplies
  • Industrial Automation
  • Battery Protection
  • Uninterruptible Power Supplies
  • Energy Inverters
  • Energy Storage
  • Load Switch
  • Battery Opperated Tools
  • Solar Inverters
  • 最大值 rDS(on) = 2.6 mΩ（VGS = 10 V、ID = 27 A
    ）
  • 快速开关速度
  • 低栅极电荷
  • 高性能沟道技术可实现极低的 RDS(on)
  • 高功率和高电流处理能力
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDB0260N1007L

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Active

CAD Model

Pb

A

H

P

D2PAK-7 / TO-263-7

418AY

1

245

REEL

800

Y

N-Channel

PowerTrench® T1

D2PAK7

Low-Medium Voltage

Standard

0

Single

0

100

2.6

±20

4

200

250

-

-

-

84

6101

17

97

1343

46

$4.6438

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