Low/Medium Voltage MOSFETs | FDB045AN08_F085

75 V、80 A、3.9 mΩ、D2PAK
N 沟道 PowerTrench®

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N-Channel PowerTrench® MOSFET 75 V, 80 A, 3.9 mΩ, The latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.

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  • rDS(ON) = 3.9 mΩ （典型值）、VGS = 10 V、ID = 80 A
  • Qg(tot) = 92nC （典型值），VGS = 10V
  • 低米勒电荷
  • 低 QRR体二极管
  • UIS 能力（单脉冲和重复脉冲）
  • 符合 AEC Q101 标准
  • 符合 RoHS 标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDB045AN08A0-F085

Contact Sales

Last Shipments

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

N

N-Channel

PowerTrench® T1

D2PAK-3

Low-Medium Voltage

Standard

0

Single

0

80

4.5

±20

4

80

310

-

-

-

92

6600

21

54

1000

240

Price N/A

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