Low/Medium Voltage MOSFETs | FDB1D7N10CL7

功率 MOSFET，N 沟道，Standard Gate，100 V，268 A，1.7 mΩ

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CAD Model

CAD模型

概览

此 N 沟道 MV MOSFET 是使用安森美半导体先进的 Power Trench 工艺生产的，该工艺结合了屏蔽门极技术。此工艺经过了优化，可最大程度降低导通电阻，同时可保持卓越的开关性能，以及业内最佳的软体二极管。

  • Motor Control
  • DC-DC Converters
  • Battery Management
  • Solar Inverters
  • Fork Lifts, Multi Rotor Drones, Power Tools
  • Power Supplies
  • Battery Packs and Chargers
  • Power Optimizers
  • Low Qrr
  • Soft recovery body diode
  • Low RDS(on)
  • Small Footprint (5 x 6 mm)
  • RoHS compliant

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDB1D7N10CL7

Contact Sales

Active

CAD Model

Pb

A

H

P

D2PAK-7 / TO-263-7

418AY

1

245

REEL

800

Y

N-Channel

PowerTrench® T8

D2PAK7

Low-Medium Voltage

Standard

0

Single

0

100

1.75

±20

4

268

250

-

-

-

116

8285

-

869

5025

50

$3.4397

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