Low/Medium Voltage MOSFETs | FDD6530A

N 沟道，PowerTrench® MOSFET，20V，21A，32mΩ

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CAD Model

CAD模型

概览

此 N 沟道 MOSFET 专为提高 DC/DC 转换器的总能效而设计，可以使用同步开关 PWM 控制器，也可以使用传统开关 PWM 控制器。它经过了优化，可实现低门极电荷、低 RDS(ON) 和快速开关。

  • This product is general usage and suitable for many different applications.
  • -21 A，-20V。
  • RDS(ON) = 32 mΩ @ VGS = 4.5 V
  • RDS(ON) = 47 mΩ @ VGS = 2.5V
  • 低栅极电荷（6.5nC，典型值）
  • 快速开关
  • 高性能沟道技术可实现极低的RDS(ON)

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD6530A

Contact Sales

Obsolete

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

NA

Low-Medium Voltage

Logic

0

Single

0

20

-

8

1.2

21

33

47

32

5

6.5

710

-

-

-

-

Price N/A

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