Low/Medium Voltage MOSFETs | FDMQ8205

GreenBridgeTM 2 系列高效桥式整流器

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CAD Model

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概览

FDMQ8205 是用于桥式应用的 GreenBridgeTM2 系列四 MOSFET，因此输入对器件所连接电源的极性不敏感。很多知名桥式整流电路均可使用传统二极管进行配置。传统二极管桥的功率损耗相对较高，在很多应用中都不希望发生这种情况。尤其对于要求高效桥接的以太网电源 (PoE) 供电设备 (PD) 应用来说更是如此，因为此应用要使用 IEEE802.3at 类别电源设备 (PSE) 提供的有限功率运行。FDMQ8205 配备了低 rDS(on) 的双 P 沟道 MOSFET 和 N 沟道 MOSFET，因此与传统二极管桥相比，可以降低由于电压降造成的功率损耗。FDMQ8205 使得应用能够最大程度利用可用功率和电压，消除 PoE PD 应用中的热设计问题。FDMQ8205 GreenBridgeTM2 不会降低检测和分类要求，并且具有较小的回送电压，因此可兼容 IEEE802.3at PoE 标准。

  • This product is general usage and suitable for many different applications.
  • IP Phones
  • Network Cameras
  • Wireless Access Points
  • Thin Clients
  • Microcell
  • Femtocell
  • 低功耗 GreenBridgeTM替代为二极管桥
  • MOSFET 自驱动电路
  • 低 rDS(on) MOSFET
  • 使有效功率和电压最大化
  • 解决热设计问题
  • 符合 IEEE802.3at 标准
    - 满足检测和分类需求 - 工作在 2 和 4 对结构下 - 小反馈电压
  • 紧凑的 MLP 4.5x5 包装

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMQ8205

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Active

CAD Model

Pb

A

H

P

WDFN-12

511CS

1

260

REEL

3000

Y

Complementary

PowerTrench® T1

WDFN-12

Low-Medium Voltage

Standard

0

Quad

0

80

-

-

-

-

2.5

-

-

-

-

-

-

-

-

-

$2.4572

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