Low/Medium Voltage MOSFETs | FDMS8888

N沟道PowerTrench® MOSFET 30V，21A，9.5mΩ

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CAD Model

CAD模型

概览

FDMS8888 设计用于最大限度地降低功率转换应用中的损耗。 先进的硅和封装技术完美融合，在保持卓越开关性能的同时，提供最低的 rDS(on)。

  • 笔记本电脑
  • Synchronous Buck for Notebook Vcore and Server
  • Notebook Battery Pack
  • Load Switch
  • 最大 rDS(on) = 9.5 mΩ（VGS = 10 V、ID = 13.5 A
    ）
  • 最大 rDS(on) = 14.5 mΩ（VGS = 4.5 V、ID = 10.9 A
    ）
  • 低 rDS(on)和高效的先进硅封装
  • MSL1 耐用封装设计
  • 符合RoHS标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS8888

Contact Sales

Last Shipments

CAD Model

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Logic

0

Single

0

30

9.5

20

2.5

21

42

-

14.5

-

13

1195

-

-

-

-

Price N/A

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