Low/Medium Voltage MOSFETs | NTMTS0D4N04C

单 N 沟道，功率 MOSFET，40V，558A，0.45mΩ，PQFN 8x8

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CAD Model

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概览

此 N 沟道 MV MOSFET 是使用安森美半导体先进的 Power Trench 工艺生产的，该工艺结合了屏蔽门极技术。此工艺经过了优化，可最大程度降低导通电阻，同时可保持卓越的开关性能，以及业内最佳的软体二极管。

  • Motor Control
  • DC-DC Converters
  • Battery Management/Protection
  • Power Steering/ Load Switch
  • Power Tools, E-Scooters, Drones
  • Battery Management/ Protection
  • Necom, Telecom
  • Power Supplies
  • Very Low RDS(on), Shielded Gate Trench Technology
  • Low Profile PQFN 8x8 package
  • Maximum junction temperature of 175C
  • RoHS Compliant

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTMTS0D4N04CTXG

Contact Sales

Active

CAD Model

Pb

A

H

P

DFNW-8

507AP

1

260

REEL

3000

Y

N-Channel

PowerTrench® T6

Power 88

Low-Medium Voltage

Standard

0

Single

0

40

0.45

20

4

553

244

~NA~

~NA~

~NA~

251

16500

~NA~

338

8310

607

$2.7048

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