Small Signal MOSFETs | FDN335N

N 沟道，2.5V 指定，PowerTrench™ MOSFET，20V，1.7A，70mΩ

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概览

此 N 沟道 2.5V 指定 MOSFET 是使用先进的 PowerTrench 工艺生产的，特别适用于最大程度降低导通电阻，同时保持低门极电荷，实现卓越的开关性能。

  • This product is general usage and suitable for many different applications.
  • DC/DC converter
  • Load Switch

  • 1.7 A，20 V。 RDS(on) = 0.07 Ω @ VGS = 4.5 V。 RDS(on) = 0.100 Ω @ VGS = 2.5 V。
  • RDS(on) = 0.07 Ω @ VGS = 4.5 V
  • RDS(on) = 0.100 Ω @ VGS = 2.5 V
  • 低栅极电荷（3.5nC，典型值）。
  • 高性能沟道技术可实现极低的RDS(ON)。
  • 高功率和高电流处理能力。

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDN335N

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CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

Single

0

20

-

8

1.5

1.7

0.5

100

70

7

3.5

310

-

-

-

-

$0.1315

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可靠性数据

Die Related Summary Data

Device: FDN335N

Equivalent to wafer fab process: TR

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TR

1

1603286882

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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