用于 3 节锂电子电池保护的双 N 沟道功率 MOSFET,30 V,30 A,2.6 mΩ

Last Shipments

概览

此 N 沟道功率 MOSFET 是使用安森美半导体的沟槽技术生产的,专门用于最大程度减小门极电荷,实现超低导通电阻。此器件适用于无人机或笔记本电脑应用。

  • 3-Cells Lithium-ion Battery Charging and Discharging Switch

  • Drone
  • Notebook PC

  • Ultra Low On-Resistance
  • Low Gate Charge
  • RoHS compliance
  • High Speed Switching
  • Common-Drain type

Tools and Resources

Product services, tools and other useful resources related to EFC4C002NL

产品列表

如需购买产品或样品,请先登录您的安森美账号。

搜寻

Close Search

产品:

1

分享

产品系列:

可订购器件:

1

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

EFC4C002NLTDG

Last Shipments

CAD Model

Pb

A

H

P

WLCSP-8

NA

0

REEL

5000

N

N-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

Dual Common Drain

0

30

Q1=Q2=2.6

20

2.2

30

2.6

-

Q1=Q2=5.1

21.7

45

6200

-

-

-

-

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :

Product Support

如果你希望对这款安森美产品作进一步了解,欢迎点击下方提交表格联系我们的销售团队。