方案
按技术分类
此 N 沟道 2.5V 指定 MOSFET 是使用先进的 PowerTrench® 工艺生产的,特别适用于最大程度降低导通电阻,同时保持低门极电荷,实现卓越的开关性能。与更大的 SO-8 和 TSSOP-8 封装相比,此器件可在非常小的占地面积中提供卓越的功率耗散。
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可订购器件:
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产品
状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
Id Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
FDC637AN
Active
Pb
A
H
P
TSOT-23-6
1
260
REEL
3000
Y
N-Channel
PowerTrench® T1
SC-6
Small Signal
Logic
0
Single
0
20
-
8
1.5
6.2
1.6
32
24
8
10.5
1125
-
-
-
-
$0.2608
More Details
FDC637AN-NB5E023A
Obsolete
Pb
A
H
P
TSOT-23-6
1
260
REEL
3000
N
N-Channel
PowerTrench® T1
TSOT-23-6
Small Signal
Logic
0
Single
0
20
-
8
1.5
6.2
1.6
32
24
8
10.5
1125
-
-
-
-
Price N/A
More Details
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