Small Signal MOSFETs | FDD10N20LZ

功率 MOSFET，N 沟道，逻辑电平，UniFETTM，200 V，7.6 A，360 mΩ，DPAK

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概览

UniFETTM MOSFET 是基于平面条纹和 DMOS 技术的高压 MOSFET 系列。此 MOSFET 适用于降低导通电阻，提供更好的开关性能以及更高的雪崩能量强度。此器件系列适用于开关电源转换器应用，如功率因数校正 (PFC)、平板显示屏 (FPD) TV 电源、ATX 和电子灯镇流器。

  • This product is general usage and suitable for many different applications.

  • RDS(on) = 300mΩ （典型值）@ VGS = 10V, ID = 3.8A
  • 低栅极电荷（典型值 12nC）
  • 低 Crss（典型值 11pF）
  • 100% 经过雪崩击穿测试
  • 提高了 dv/dt 处理能力
  • 改进了 ESD 防护能力
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD10N20LZTM

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Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

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PowerTrench® T1

TO-252-3

Small Signal

Logic

0

Single

0

200

360

±20

3

7.6

83

-

400

-

12

440

3.5

500

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可靠性数据

Die Related Summary Data

Device: FDD10N20LZTM

Equivalent to wafer fab process: 3C

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3C

0

1676189102

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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