Small Signal MOSFETs | FDD8778

N 沟道 PowerTrench® MOSFET 25V，35A，14mΩ

Obsolete

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概览

此 N 沟道 MOSFET 专为提高 DC/DC 转换器的总体效能而设计，可以使用同步开关 PWM 控制器，也可以使用传统开关 PWM 控制器。它经过了优化，可实现低门极电荷、低 rDS(on) 和快速开关。

  • This product is general usage and suitable for many different applications.

  • VGS = 10V，ID = 35A时，最大rDS(on) = 14.0 mΩ
  • 最大rDS(on) 此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极电荷、低rDS(ON) 和高速开关进行了优化。 = 21.0m? VGS= 4.5V，ID = 33A时
  • 低栅极电荷： Qg(TOT) = 12.6nC（典型值），VGS = 10V
  • 低栅极电阻
  • 符合RoHS标准

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状态

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD8778

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Obsolete

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Logic

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Single

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25

14

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2.5

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39

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21

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可靠性数据

Die Related Summary Data

Device: FDD8778

Equivalent to wafer fab process: T5

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T5

0

1599906359

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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