Small Signal MOSFETs | FDD8778

N 沟道 PowerTrench® MOSFET 25V，35A，14mΩ

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CAD Model

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概览

此 N 沟道 MOSFET 专为提高 DC/DC 转换器的总体效能而设计，可以使用同步开关 PWM 控制器，也可以使用传统开关 PWM 控制器。它经过了优化，可实现低门极电荷、低 rDS(on) 和快速开关。

  • This product is general usage and suitable for many different applications.
  • VGS = 10V，ID = 35A时，最大rDS(on) = 14.0 mΩ
  • 最大rDS(on) 此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极电荷、低rDS(ON) 和高速开关进行了优化。 = 21.0m? VGS= 4.5V，ID = 33A时
  • 低栅极电荷： Qg(TOT) = 12.6nC（典型值），VGS = 10V
  • 低栅极电阻
  • 符合RoHS标准

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD8778

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Last Shipments

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

TO-252-3

Small Signal

Logic

0

Single

0

25

14

20

2.5

35

39

-

21

9.4

6.7

635

-

-

-

-

Price N/A

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