方案
按技术分类
设计
此 N 沟道 MOSFET 专为提高 DC/DC 转换器的总体效能而设计,可以使用同步开关 PWM 控制器,也可以使用传统开关 PWM 控制器。它经过了优化,可实现低门极电荷、低 rDS(on) 和快速开关。
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CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
Id Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
FDD8778
Last Shipments
Pb
A
H
P
DPAK-3 / TO-252-3
1
260
REEL
2500
N
N-Channel
PowerTrench® T1
TO-252-3
Small Signal
Logic
0
Single
0
25
14
20
2.5
35
39
-
21
9.4
6.7
635
-
-
-
-
Price N/A
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