Small Signal MOSFETs | FDG6335N

N 沟道 PowerTrench® MOSFET，20V，0.7A，300mΩ

Lifetime

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概览

此 N 沟道 MOSFET 专为使用同步或传统开关 PWM 控制器来提高 DC/DC 转换器的总体能效而设计。它非常适合用于小型开关稳压器，在小型封装中提供极低的 RDS(ON) 和门极电荷 (QG)。

  • This product is general usage and suitable for many different applications.

  • 0.7A，20V。 RDS(ON) = 300mΩ @ VGS = 4.5V RDS(ON) = 400mΩ @ VGS = 2.5V
  • 低栅极电荷（1.1nC，典型值）
  • 高性能沟道技术可实现极低的RDS(on)
  • 紧凑的工业标准SC70-6表面贴装封装。

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDG6335N

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Lifetime

相似产品推荐
CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

Dual

0

20

-

12

1.5

0.7

0.3

Q1=Q2=400

Q1=Q2=300

1.03

1.1

113

-

-

-

-

$0.1651

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可靠性数据

Die Related Summary Data

Device: FDG6335N

Equivalent to wafer fab process: TT

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TT

6

2104831460

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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