Small Signal MOSFETs | FDN86501LZ

N 沟道，屏蔽门极，PowerTrench® MOSFET，60 V，2.6 A，116 mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench®工艺生产的，该工艺结合了屏蔽门极技术。此工艺针对 rDS(on)、开关性能和坚固性进行了优化。

  • Primary DC-DC Switch
  • Load Switch

  • 屏蔽栅极 MOSFET 技术
  • 最大 rDS(on) = 116 mΩ（VGS = 10 V、ID = 2.6 A
    ）
  • 最大 rDS(on) = 170 mΩ（VGS = 4.5 V、ID = 2.1 A
    ）
  • 高性能沟道技术可实现极低的 rDS(on)
  • 高功率和高电流处理能力，采用广泛使用的表面贴装封装
  • 快速开关速度
  • 100% 经过 UIL 测试
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDN86501LZ

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CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

Single

0

60

116

±20

2.4

2.6

1.5

-

173

-

1.9

236

0.6

19

77

4.9

$0.7705

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可靠性数据

Die Related Summary Data

Device: FDN86501LZ

Equivalent to wafer fab process: T7

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T7

11

3294609671

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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