Small Signal MOSFETs | FDP55N06

功率 MOSFET，N 沟道，UniFETTM，60 V，55 A，22mΩ，TO-220

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概览

UniFETTM MOSFET 是基于平面条纹和 DMOS 技术的高压 MOSFET 系列。此 MOSFET 适用于降低导通电阻，提供更佳的开关性能以及更高的雪崩能量强度。此器件系列适用于开关电力转换器应用，如功率系数校正 (PFC)、平板显示屏 (FPD) TV 电源、ATX 和电子灯镇流器。

  • AC-DC商用电源-服务器和工作站
  • 工作站
  • 服务器和大型机
  • 台式计算机
  • AC-DC商用电源-台式计算机
  • 其他数据处理
  • Power Factor Correction
  • RDS(on) = 22 mΩ （最大值），需 VGS = 10 V、ID = 27.5 A栅极电荷低（典型值：30nC)
  • 低 Crss（典型值60pF)
  • 100% 经过雪崩击穿测试
  • 100% avalanche tested

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDP55N06

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Last Shipments

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

N-Channel

PowerTrench® T1

TO-220

Small Signal

Standard

0

Single

0

60

22

±20

4

55

114

-

-

-

30

1160

7.5

55000

375

60

Price N/A

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